Component of protection of an integrated MOS power transistor against voltage gradients
US6057577A · kind A · utility
5Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | May 27, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/904
Abstract
The present invention relate to a device of protection against voltage gradients of a monolithic component including a vertical MOS power transistor and logic circuits. The protection circuit has an N-type substrate corresponding to the drain of the MOS transistor, and logic components being realized in at least one P-type well formed in the upper surface of the substrate. Each of the N-type regions connected to the ground of the logic circuit, or to a node of low impedance with respect to the ground, is in series with a resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.