Method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film
US6059878A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1999 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Mar 8, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/28
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is used when manufacturing a bismuth-substituted rare-earth iron garnet single crystal (BIG) film by the LPE method. The BIG film is grown on one side of a non-magnetic garnet substrate using a melt that contains flux components and rare-earth oxides. An amount of calcium is added to the melt such that a difference between optical absorption coefficients of the film at a wavelength of 0.78 .mu.m before and after subjecting the film to hydrogen-reduction treatment ranges from 660 to 1430 dB/cm. The film is grown on a non-magnetic garnet substrate having a thickness in the range of 400-600 .mu.m, at a crystal growth temperature of the melt to form a film-substrate structure. The film-substrate structure has a curvature ranging from +0.3 to +0.7 m.sup.-1 at room temperature. The film-substrate structure is subjected to the hydrogen reduction at a temperature ranging from 320 to 400.degree. C. in a hydrogen atmosphere, so that the curvature of the film-substrate structure decreases to a value ranging from -0.1 to +0.1 m.sup.-1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.