CVD method of manufacturing diamond crystal
US6060118A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 11, 1997 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Dec 11, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a diamond crystal in which the (111) oriented plane is of the diamond crystal synthesized on a substrate by a chemical vapor deposition method parallel to a substrate surface, and the area of the (111) oriented plane parallel to the substrate surface is 1/24or less an area of the crystal on the substrate. A source gas is activated on a substrate consisting of a material which is not reactive with carbon. The source gas contains at least carbon and hydrogen in such a manner that the ratio of the number of carbon atoms to the total number of molecules of the source gas is 0.5% or less. Subsequently, a diamond crystal in which the (111) orientation plane is parallel to the substrate surface, and the area of the (111) orientation plane parallel to the substrate surface is precipitated on the substrate. A copper plate is preferably contains used as the substrate. The source gas preferably contains at least methane gas and hydrogen gas, and the concentration of methane gas is preferably set to be 0.5% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.