193 nm positive-working photoresist composition
US6060212A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1998 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Jun 11, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/039
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A polymer that when used with a suitable photoacid generator (PAG) forms a positive working photoresist. The polymer comprises of a tartaric polyanhydride backbone, an acetal protected 1,2 diol group; and a fused ring acetal group pendant to the backbone. The acetal protected .alpha.-hydroxy anhydride backbone structure, undergoes an efficient photoacid catalyzed cleavage, which gives rise to small molecular weight fragments which are readily dissolved in an aqueous base developer. This high contrast in solubility allows high resolution images to be produced. The fused rings offer etch resistance and can be comprised of either an adamantone or norcamphor ring structure. With the addition of a commercially available photo acid generator, the polymer formulation forms a positive working photoresist that offers high contrast and resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.