Patent · US Expired

Method for making heterostructure thermionic coolers

US6060331A · kind A · utility

36Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 29, 1999
Grant dateMay 9, 2000
Priority date
Expiry dateMar 29, 2019

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/824

Abstract

A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. The barrier layer has a high enough barrier for the cold side to only allow "hot" electrons, or electrons of high enough energy, across the barrier. The barrier layer is constructed to have an internal electric field such that the electrons that make it over the initial barrier are assisted in travel to the anode. Once electrons drop to the energy level of the anode, they lose energy to the lattice, thus heating the lattice at the anode. The barrier height of the barrier layer is high enough to prevent the electrons from traveling in the reverse direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.