Method for producing a semiconductor substrate
US6060344A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1998 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Aug 19, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for producing a semiconductor substrate completed through a bonding process for joining a semiconductor wafer to a support substrate by performing heat treatment thereto in a state in which the semiconductor wafer is closely joined to the support substrate, the method according to the present invention includes the following steps, i.e., a depositing process for depositing a poly-crystal semiconductor which covers all areas of a surface to be bonded on the surface of the semiconductor wafer; a heat treatment process for performing the heat treatment to the semiconductor wafer provided after the depositing process, during a predetermined time under a temperature equal to or higher than the heat treatment temperature at the bonding process; and a polishing process for flattening the surface of the poly-crystal semiconductor provided after the heat treatment process. After the above processes were performed in order, the bonding process is performed after the polishing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.