Method for manufacturing a flip chip semiconductor device
US6060373A · kind A · utility
70Cited by
4References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 9, 1999 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Jul 9, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plurality of pad electrodes are formed on a first surface of an IC wafer, and a solder layer is formed on each of the pad electrodes. The first surface of the IC wafer including solder layers is coated with a flux layer, and solder layers are reflowed to round each of the solder layers, thereby forming each solder layer into a solder bump. An adhesive tape is adhered on the flux layer, and a second surface opposite to the first surface of the IC wafer is ground to form a flip chip semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.