Method of manufacturing semiconductor device
US6060403A · kind A · utility
24Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1998 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Sep 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device comprises the step of applying a nitridation treatment to a semiconductor substrate in the presence of a network terminal element so as to form a nitride film containing the network terminal element on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.