Si/SiGe superlattice structures for use in thermoelectric devices
US6060656A · kind A · utility
32Cited by
36References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1998 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Mar 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/8556
Abstract
A superlattice structure for use in thermoelectric power generation systems includes m layers of a first one of Silicon and Antimony doped Silicon-Germanium alternating with n layers of Silicon-Germanium which provides a superlattice structure having a thermoelectric figure of merit which increases with increasing temperature above the maximum thermoelectric figure of merit achievable for bulk SiGe alloys.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.