Semiconductor light emitting device
US6060730A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 7, 1998 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Jul 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
Abstract
There is provided a semiconductor laminated portion in which gallium nitride based compound semiconductor layers including an n-type layer and a p-type layer are laminated for forming an emitting layer on a substrate. Then, an n-side electrode and a p-side electrode are provided so as to be electrically connected to the n-type layer and p-type layer of the semiconductor laminated portion, respectively. The n-type layer includes at least an n-type first layer and an n.sup.+ -type second layer so that the carrier concentration of the portion to be provided with the n-side electrode is higher than the carrier concentration of the portion in contact with the emitting layer. Consequently, the ohmic contact characteristics of the n-type layer and n-side electrode are improved to reduce a forward voltage, resulting in a semiconductor light emitting device with high light emitting efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.