Semiconductor integrated circuit device using a silicon-on-insulator substrate
US6060748A · kind A · utility
15Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1997 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Dec 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit (IC) device has a silicon-on-insulator substrate having a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a silicon layer formed on the insulating film. The semiconductor IC device includes at least one semiconductor device formed on the semiconductor substrate, and at least one semiconductor device formed on the silicon layer and operated with a power-supply voltage different from a power-supply voltage for the semiconductor device formed on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.