High frequency RF diode with low parasitic capacitance

US6060757A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Reinhard Losehand
• Hubert Werthmann · Birkenfeld, DE

Key dates

• Filing date: Aug 27, 1998
• Grant date: May 9, 2000
• Expiry date: Aug 27, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/221

Abstract

An RF diode, and method for its manufacture, in which a well, doped n-conductive or p-conductive, is formed in a high-ohmic silicon substrate. A silicon epitaxial layer is provided over a first subregion of a surface of the well wherein the layer has the same conductivity type as the doped well. The silicon epitaxial layer is provided with a first Schottky contact layer onto which a first contact metallization is applied. A second subregion located next to the first subregion of the surface of the well is provided with a second Schottky contact layer onto which a second contact metallization is applied.