Semiconductor device and a method of manufacturing the same
US6060765A · kind A · utility
28Cited by
1References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 8, 1998 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Jul 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided which is improved to be capable of stably forming a contact hole. A stopper film is provided on a gate electrode. An interlayer insulating film is provided on a semiconductor substrate to cover the gate electrode. The interlayer insulating film and the stopper film are penetrated by a first contact hole which exposes a surface of the gate electrode. The interlayer insulating film is provided with a second contact hole for exposing a surface of an impurity diffusion layer. The stopper film is formed of a material higher in etch selectivity than the interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.