Self-aligned fuse structure and method with anti-reflective coating
US6061264A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1998 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Jul 17, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a self-aligned semiconductor fuse structure, a method of making such a fuse structure, and apparatuses incorporating such a fuse structure. The fuse break point, that point at which the electrical link of which the fuse is part is severed by a laser beam, is self-aligned by the use of photolithography and an anti-reflective coating. The self-alignment allows the size and location of the break point to be less sensitive to the laser beam size and alignment. This has several advantages, including allowing photolithographic control and effective size reduction of the laser spot irradiating the fuse material and surrounding structure. This permits reduced fuse pitch, increasing density and the efficiency of use of chip area, and results in reduced thermal exposure, which causes less damage to chip. In addition, laser alignment is less critical and therefore less time-consuming, which increases throughput in fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.