Vertical cavity surface emitting laser with doped active region and method of fabrication
US6061380A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1997 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Sep 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
VCSEL for high speed operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The active region includes a plurality of quantum well layers, or structures, and a plurality of doped barrier layers. The doping of the barrier layers allows for a faster recombination time of the carriers prior to any occurrence of lateral carrier diffusion. This faster recombination time of the carriers prevents turn-off tails when the VCSEL device is switched off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.