Method for depositing a carbon film on a membrane
US6063246A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 1997 |
| Grant date | May 16, 2000 |
| Priority date | — |
| Expiry date | May 23, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing carbon films on membranes used in masks for X-ray or corpuscular projection, e.g. electron or ion beam, lithography is proposed in which sputtering is used and the membranes serving as sputter substrates are positioned in the off-axis configuration relative to the sputter targets. The carbon films thus produced have a compressive stress of the order of 10 MPa or below. For modifying the properties of carbon films after deposition, e.g. the deactivation of chemically reactive sites or stabilization of stress, ion bombardment with helium ions can be employed. This method anticipates changes in the film due to initial irradiation and serves to reach a plateau in which the stress varies only a little, i.e. within about 1 MPa or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.