Manufacture of a silicon waveguide structure
US6063299A · kind A · utility
20Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1999 |
| Grant date | May 16, 2000 |
| Priority date | — |
| Expiry date | Jan 13, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for making a silicon rib wavegide structure is described comporising the following steps: PA1 (i) forming a window in a protective layer on the surface of a silicon wafer to expose a part of said surface; PA1 (ii) depositing a buffer layer at least over said exposed surface; PA1 (iii) carrying out an etch step to etch the buffer layer and silicon outside a protected rib portion thereby to form a silicon rib with the buffer layer on its upper surface; and PA1 (iv) forming a layer of cladding at least on side walls of the silicon rib.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.