Bonding of porous materials to other materials utilizing chemical vapor deposition
US6063442A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1998 |
| Grant date | May 16, 2000 |
| Priority date | — |
| Expiry date | Oct 26, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4418
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for bonding a porous material having an opened porous cellular structure to a substrate material, the process including the steps of: conditioning the substrate with tantalum in a reactor at 925.degree. C. having a tantalum source pot at 550.degree. C.; affixing the porous material to the conditioned substrate to form an affixed composite structure by clamping the porous material to the conditioned substrate; and, subjecting the composite structure to a chemical vapor deposition process (CVD) which uses tantalum as a source material for a time sufficient to CVD bond the porous material to the conditioned substrate material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.