Magnetoresistance effects film
US6063491A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 1998 |
| Grant date | May 16, 2000 |
| Priority date | — |
| Expiry date | Mar 11, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
Abstract
The invention provides a magnetoresistance effects film including (a) at least two thin magnetic films deposited on a substrate, (b) at least one thin nonmagnetic film interposed between the thin magnetic films, and (c) a thin antiferromagnetic film disposed adjacent to one of the thin magnetic films between which the thin nonmagnetic film is interposed. A bias magnetic field of one of the thin magnetic films induced by the thin antiferromagnetic film has an intensity Hr greater than a coercivity H.sub.C2 of the other of the thin magnetic films which is remote from the thin antiferromagnetic film (Hr>H.sub.C2). The thin antiferromagnetic film has a superlattice structure composed of at least two of NiO, Ni.sub.x Co.sub.1-x O(x=0.1-0.9) and CoO. A ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even when a small external field is applied thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.