Patent · US Expired

Planar trenches

US6063693A · kind A · utility

2Cited by

4References

7Claims

0Family size

Assignee

Telefonaktiebolaget LM Ericsson (Publ) · SE

Inventors

Anders Soderbarg · Uppsala, SE
Nils Ogren · Sundbyberg, SE
Håkan Sjödin · Knivsta, SE
Mikael Zackrisson · Rimbo, SE

Key dates

Filing date	Mar 23, 1998
Grant date	May 16, 2000
Priority date	—
Expiry date	Mar 23, 2018

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/763
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Method for improving the topography over trench structures in which the provision of extra poly-semiconductor material e.g. polysilicon or nitrate or oxide in the regions of the trench edges and, if necessary, the subsequent oxidation of the extra material prevents the occurrence of regions of high mechanical stress.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.