Silicon-germanium-carbon compositions and processes thereof

US6064081A · kind A · utility

Assignees

• Lawrence Semiconductor Research Laboratory, Inc. · US
• The Regents of the University of California · US
• THE ARIZONA BOARD OF REGENTS · US

Inventors

• McDonald Robinson · Paradise Valley, US
• Richard Westhoff · Hudson, US
• Charles E. Hunt · Davis, US
• Li Ling · Hong Kong, CN
• Ziv Atzmon · Chandler, US

Key dates

• Filing date: Jan 15, 1998
• Grant date: May 16, 2000
• Expiry date: Jan 15, 2018

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/15
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.