Bandgap isolated light emitter
US6064683A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 12, 1997 |
| Grant date | May 16, 2000 |
| Priority date | — |
| Expiry date | Dec 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/862
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light emitting device having a first mirror, an active layer, a second mirror, and a beryllium implantation resulting in a peripheral boundary of a waveguide through the first and second mirrors, the active layer and the trapping layer. A P-N junction is situated within the implantation and the guide. The turn on voltage is lower for the junction within the waveguide than that within the implantation, resulting in confinement of current within the guide at a voltage applied to the device that is greater than the lower junction voltage and less than the higher junction voltage. The device also has an electron trapping layer between said first mirror and said active layer, and a conduction layer situated on said second mirror.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.