Patent · US Expired

Method for the manufacture of a power semiconductor component

US6066542A · kind A · utility

5Cited by

7References

5Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Daniel Reznik · Berlin, DE
Hans-Joachim Schulze · Taufkirchen, DE
Wolfgang Eckhard · Munich, DE

Key dates

Filing date	Feb 1, 1999
Grant date	May 23, 2000
Priority date	—
Expiry date	Feb 1, 2019

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/13055
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Component structures of, for example, IGBTs are manufactured on the respective top sides of two substrates, the substrates are thinned proceeding from their respective back sides, and, after polishing, the back sides of the thinned substrates are durably electrically conductively connected to one another by wafer bonding.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.