High voltage semiconductor structure
US6066878A · kind A · utility
113Cited by
8References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 2, 1998 |
| Grant date | May 23, 2000 |
| Priority date | — |
| Expiry date | Jul 2, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/927
Abstract
A high voltage MOSFET with low on-resistance and a method of lowering the on-resistance for a specific device breakdown voltage of a high voltage MOSFET. The MOSFET includes a blocking layer of a first conductivity type having vertical sections of a second conductivity type or the blocking layer may include alternating vertical sections of a first and second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.