Semiconductor laser and method of making the same
US6067310A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1997 |
| Grant date | May 23, 2000 |
| Priority date | — |
| Expiry date | Sep 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the present method, at the time when a semiconductor laser is being made, nitrogen or phosphorus element is introduced into an active layer comprising a GaAs based compound from an end face thereof, thereby changing the region of the active layer in the vicinity of the end face into a GaN or GaP based compound. Accordingly, the energy band gap of this region is made wider than the energy band gap within the active layer, and thus substituted region is changed into a layer transparent to the laser light generated within the active layer. Thus, the end face can be prevented from deteriorating upon the temperature rise caused by laser light absorption at the end face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.