P-type silicon macromolecule used in a transistor and process for manufacture of the macromolecule

US6068698A · kind A · utility

Inventor

• Christian Schmidt · Erfurt, DE

Key dates

• Filing date: Jan 9, 1998
• Grant date: May 30, 2000
• Expiry date: Jan 9, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/80

Abstract

The invention relates to a p-type silicon macromolecule, with a multifaceted structure in which silicon atoms form the corners of an inner multifaceted structure having sides. Attached to each silicon atom is a doping atom. The doping atoms are attached to the silicon atoms and radiate out from the center of the molecule to form an outer multi-faceted structure having sides parallel to the inner multifaceted structure. The macromolecule forms a base facility in a transistor that comprises an emitter layer, a collector layer, connected to the base facility, and a control input structure. The control input structure comprises a dipole connected to a boundary surface on the transistor and at least one external modulation capacitor connected to the dipole. The capacitor receives a carrier signal from a control input signal. The dipole is spaced from the center a boundary surface by half a wavelength of the carrier signal. In this case, the charge carrier flows from the center of the affected surface on the emitter layer to the opposite parallel surface on the collector layer. The process includes the following steps: a) evaporation of a silicon crystal to produce a monatomic silicon va…