Method of making low .kappa. dielectric inorganic/organic hybrid films
US6068884A · kind A · utility
197Cited by
5References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1998 |
| Grant date | May 30, 2000 |
| Priority date | — |
| Expiry date | Apr 28, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si--O--Si or Si--N--Si groups with organic side groups attached to the backbone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.