Arrangement for the reduction of noise in microwave transistors and method for the manufacture thereof

US6069404A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Klaus Aufinger · Ottobrunn, DE
• Herbert Knapp · Munich, DE

Key dates

• Filing date: Sep 17, 1998
• Grant date: May 30, 2000
• Expiry date: Sep 17, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/137

Abstract

A structure for a microwave device in which the minimum noise figure is reduced in that underneath the base terminal surface of a transistor, a highly-doped trenched layer is formed, which layer is connected to a reference potential in the vicinity of the base terminal surface via a standard collector contact.