N-drive or P-drive VCSEL array
US6069908A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1998 |
| Grant date | May 30, 2000 |
| Priority date | — |
| Expiry date | Feb 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0422
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A VCSEL that is adapted to the fabrication of an array of VCSELs. A VCSEL array according to the present invention includes first and second VCSELs for generating light of a predetermined wavelength. Each VCSEL includes a bottom reflector comprising an epitaxial layer of a semiconductor of a first conductivity type, a light generation region and a top reflector comprising a semiconductor of a second conductivity type. A bottom electrode is electrically connected to the bottom reflector, and a top electrode is electrically connected to the top reflector. The bottom electrode is grown on top of a buffer layer having an electrical conductivity less than a predetermined value and a crystalline structure that permits epitaxial growth of the bottom reflector on the buffer layer. The buffer layer may be grown on top of a substrate or be the substrate itself in the case in which a substrate having sufficiently low conductivity is utilized. The bottom reflector of each of the VCSELs is in contact with the top of the buffer layer. The first and second VCSELs are electrically isolated from one another by a trench extending into the buffer layer. The buffer layer is constructed from a material…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.