Method of deposition
US6071676A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1998 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Oct 13, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2043
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is described a method of chemically depositing a substance. The method is of utility in the direct manufacture of integrated circuits and in the manufacture of a photomask for use in production of integrated circuits. The method involves the use of a compound which degrades into a deposit and a residue when a radiant beam (e.g. a laser beam) or a particle beam (e.g. an electron beam) is applied. The residue and any unreacted compound may be washed off the substrate to which it has been applied. Nanoscale dimensions of the deposit can be achieved. A particularly suitable organometallic compound is tetra-sec butyl diaurum difluoride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.