Fully overlapped nitride-etch defined device and processing sequence
US6071825A · kind A · utility
3Cited by
14References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 4, 1997 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Dec 4, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to methods for fabricating Fully Overlapped Nitride-Etch Defined (Fond) devices. These methods permit the lateral dimension and depth of the lowly-doped source and drain extensions to be independently controlled and well defined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.