Thinned CCD
US6072204A · kind A · utility
1Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1997 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Jun 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
An integrated circuit device structure comprises a semiconductor plateau containing an active region subjacent its front side, an electrode structure at the front side of the plateau, and an insulating layer surrounding the semiconductor plateau. A front side bus at the front side of the insulating layer is connected to the electrode structure. The front side bus extends over an elongate aperture in the insulating layer and is connected through the aperture to a back side bus over substantially the entire length of the front side bus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.