Contact structure of semiconductor memory device for reducing contact related defect and contact resistance and method for forming the same
US6072242A · kind A · utility
15Cited by
3References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 10, 1998 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Dec 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact structure for a semiconductor memory device that reduces contact related defects and contact resistance and a method for forming the same are provided. The semiconductor memory device having an insulation layer formed on a conductive layer includes a contact formed within an opening having a bilobate shape. The contact passes through a part of the insulation layer up to the upper surface of the conductive layer from the top of the insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.