Memory structures and methods of making same
US6072716A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1999 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Apr 14, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Electrically erasable and rewritable memory structures with reversible states and good retention times may be constructed on flexible substrates using simple room-temperature deposition (e.g., printing) processes and curing temperatures below 110.degree. C. The memory structures are based on a polymer matrix having dispersed therein a particulate conductive or semiconductive material. When electrodes of suitable composition and geometry are used to apply electrical pulses of opposite polarity to the matrix material, reversible memory switching behavior is observed. In particular, subjection to positive or negative voltage pulses causes the devices to make fully-reversible transitions between low-resistance and high-resistance states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.