Non-contact processing of crystal materials
US6074476A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1998 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Dec 10, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1024
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system and method for forming spherical semiconductor crystals is disclosed. The system includes a receiver tube 18 for receiving semiconductor granules 104. The granules are then directed to a chamber 14 defined within an enclosure 20. The chamber maintains a heated, inert atmosphere with which to melt the semiconductor granules into a molten mass. A nozzle, 40, creates droplets from the molten mass, which then drop through a long drop tube 16. As the droplets move through the drop tube, they form spherical shaped semiconductor crystals 112. The drop tube is heated and the spherical shaped semiconductor crystals may be single crystals. An inductively coupled plasma torch positioned between the nozzle and the drop tube melts the droplets, but leaving a seed in-situ. The seed can thereby facilitate crystallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.