Stripping method for photoresist used as mask in Ch.sub.4 /H.sub.2 based reactive ion etching (RIE) of compound semiconductors
US6074569A · kind A · utility
9Cited by
10References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 9, 1997 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Dec 9, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for stripping photoresist used as an etch mask in carbon based reactive ion etching includes flood exposing a patterned photoresist with a light and cyclically exposing the photoresist with an oxygen plasma in between the carbon based plasma. The step of cyclically exposing occurs after the step of flood exposing. The step of flood exposing includes the step of decomposing photosensitive compounds in the photoresist, while the step of cyclically exposing includes the step of cyclically removing layers of the photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.