Process for forming the oxide superconductor thin film and laminate of the oxide superconductor thin films
US6074768A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1998 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Dec 16, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/742
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.