Polarization insensitive/independent semiconductor waveguide modulator using tensile stressors
US6075254A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1998 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Mar 24, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/06
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor waveguide modulator that is polarization insensitive/independent at bias variations for any chosen wavelength. The modulator of the present invention employs a novel type of strained semiconductor quantum well (QW) structure that exhibits bias independent, heavy-hole and light hole degeneracy. This effect is achieved by inserting one or two thin layers of highly tensile, strained materials in a specific position within the QW. By adjusting the thickness and the position of the highly tensile strained layers, the quantum confined Stark effect (QCSE) for the heavy hole and light hole can be engineered separately to control the bias dependent polarization properties. The present invention has applications, for example, in optoelectronic devices in the areas of telecommunications, optical signal processing, scanning and displays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.