ESD protection device using Zener diodes
US6075276A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 22, 1997 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Dec 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
A semiconductor device is provided which includes a first conductivity type semiconductor substrate, a second conductivity type Zener region formed in a surface layer of the first conductivity type semiconductor substrate, a first conductivity type anode region formed within the second conductivity type Zener region, an anode electrode which is formed in contact with both of the semiconductor substrate and first conductivity type anode region and is grounded, and a cathode electrode formed on a surface of the second conductivity type Zener region and connected to input and output terminals. A diode that consists of the first conductivity type semiconductor substrate and the second conductivity type Zener region and a diode that consists of the first conductivity type anode region and the second conductivity type Zener region serve as protective elements for preventing electrostatic breakdown of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.