Power integrated circuit
US6075277A · kind A · utility
13Cited by
8References
116Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 22, 1995 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Dec 22, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous components, are formed in insulated sections of the substrate, whose lateral insulation is provided by a diffused wall of the second conductivity type and whose bottom is insulated through a dielectric layer interposed between the bottom surface of the substrate and the metallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.