Lateral confinement laser
US6075802A · kind A · utility
9Cited by
9References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1998 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Mar 12, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser comprising a mesa structure (11), the lateral current distribution in the mesa structure (11) is controlled in order to reduce the current at the mesa walls near the active lasing layer (15) by locating, in the mesa structure, a current blocking layer (13) having an aperture (14) of less width than the mesa structure (11) and being centred in relation to the mesa structure (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.