Patent · US Expired

Lateral confinement laser

US6075802A · kind A · utility

9Cited by
9References
2Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 12, 1998
Grant dateJun 13, 2000
Priority date
Expiry dateMar 12, 2018

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/2275
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

In a semiconductor laser comprising a mesa structure (11), the lateral current distribution in the mesa structure (11) is controlled in order to reduce the current at the mesa walls near the active lasing layer (15) by locating, in the mesa structure, a current blocking layer (13) having an aperture (14) of less width than the mesa structure (11) and being centred in relation to the mesa structure (11).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.