Method and apparatus for forming crystals
US6077410A · kind A · utility
Inventor
Key dates
| Filing date | Dec 31, 1996 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | Dec 31, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D9/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Creating relatively pure and consistent crystals of high performance minerals, such as diamond, has long been pursued. Unfortunately, synthesizing crystals that exhibit deep bonding generally requires high temperatures and high pressures for the formation of large crystals. Alternatively, high pressure and explosive shock waves can also be utilized, as demonstrated by closed-bomb diamond synthesis. Diamond crystal formation at lower temperatures and pressures have been demonstrated, but the formations have been thin and inconsistent. A method of forming diamond and the synthesis of other high performance crystals that are consistent, and can be grown to larger sizes has not existed, nor has a means of providing uniform and consistent thin layers of diamond and other such crystals been demonstrated. The present invention solves those needs by providing a method and apparatus with which to grow uniform and consistent thin sections as well as large crystals that are deeply bonded, and to do so at lower temperatures and pressures then is currently possible, and at lower cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.