Method of checking the accuracy of the result of a multistep etching process
US6077449A · kind A · utility
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4References
1Claims
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Assignee
Inventor
Key dates
| Filing date | Dec 16, 1997 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | Dec 16, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2457
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for checking the accuracy of the result of a multistep etching process for forming depressions in a substrate. The check is made possible in a simple manner by providing line patterns on the etch masks. The line patterns on the etch masks for different etching steps are different and form a vernier system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.