Method and apparatus for etching of silicon materials
US6077451A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1997 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | Mar 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method and an apparatus for etching a silicon material in order to prepare a sample for measuring the impurities which are contained in the silicon material. The silicon material is etched by contacting the silicon material with an etching gas containing a fluorine compound which is selected from the group consisting of xenon fluoride, hydrogen fluoride, oxygen fluoride and halogen fluoride, to produce a product by reaction of the silicon material with the etching gas. The product is heated to evaporate and remove the product from an impurity which is contained in the silicon material and not reactive to the etching gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.