Magneto-resistance effect element, magneto-resistance effect type head, memory element, and method for manufacturing them
US6077618A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jan 28, 1998 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | Jan 28, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1143
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element, a head of the magnetoresistance effect type and a memory element in each of which a larger MR change can be acquired in a smaller magnetic field, and a method of producing the magnetoresistance effect element. In a magnetoresistance effect element, the basic structure comprises a lamination body of a magnetic layer/a nonmagnetic insulating layer/a magnetic layer, and a nonmagnetic insulating layer has, at an exposed part thereof, a conductive portion sufficiently smaller than the contact portion of the nonmagnetic insulating layer with respect to the magnetic layers, the conductive portion electrically connecting the magnetic layer to each other. Electrode lead portions are disposed at the upper and lower magnetic layers. In the lamination body, there may be formed, in the nonmagnetic insulating layer, a column-like conductive portion which is sufficiently smaller than the contact portion of the nonmagnetic insulating layer with respect to the magnetic layers. The nonmagnetic insulting layer may be formed of an oxide or nitride of a conductive material, and the conductive portion may be lower in oxide concentration or nitride concentration than t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.