Methods of forming metal interconnections including thermally treated barrier layers
US6077772A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1999 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | Mar 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a metal interconnection includes the steps of forming a first conductive layer on a substrate, and forming an insulating layer on the first conductive layer and on the substrate. A contact hole is formed in the insulating layer thereby exposing a portion of the first conductive layer, a barrier layer is formed on the exposed portion of the first conductive layer in the contact hole, and a thermal treatment is performed on the barrier layer. After the step of performing the thermal treatment, a wetting layer is formed on a sidewall of the contact hole, and a second conductive layer is formed on the barrier layer and on the wetting layer in the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.