Method for radiofrequency wave etching
US6077787A · kind A · utility
8Cited by
9References
32Claims
0Family size
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Inventors
Key dates
| Filing date | Sep 25, 1995 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | Sep 25, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for selective controlled etching of a material particularly by sequentially switching between two (2) or more modes of radiofrequency waves and/or by distance from a source of the microwaves. The modes and/or distance are selected depending upon the surface of the material to be etched. The etching is rapidly conducted at 0.5 mtorr to 10 torr, preferably using microwave plasma etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.