Semiconductor apparatus formed by SAC (self-aligned contact) method and manufacturing method therefor
US6078073A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1997 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | Jun 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate electrode having a first insulating film laminated in the upper portion thereof is formed on a gate insulating film formed on a semiconductor substrate. A side wall is formed on the side wall of the gate electrode, and an insulating film is formed to cover the gate electrode and the side wall. Ion implantation is performed through the insulating film so that a diffusion layer is formed on the semiconductor substrate. An interlayer dielectric film is formed, and then the interlayer dielectric film and the insulating film are selectively etched so that an opening portion for exposing the gate insulating film is formed in a self-align manner with the gate electrode. Then, the gate insulating film in the bottom portion of the opening portion is removed so that the surface of the semiconductor substrate is exposed. Then, a wiring layer connected to the exposed surface of the semiconductor substrate is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.