Active matrix liquid crystal panel having an active layer and an intervening layer formed of a common semiconductor film
US6078365A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 1997 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | Jan 17, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136286
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An active matrix liquid crystal panel includes a plurality of thin film transistors respectively arranged adjacent to pixel electrodes, and a plurality of auxiliary capacitances. Each transistor has a semiconductor active layer, a pair of source and drain electrodes, and a gate electrode opposing the active layer via a gate insulating film. Each auxiliary capacitance has upper and lower electrodes, and a dielectric layer sandwiched between the upper and lower electrodes. The gate electrode, the lower electrode, and an address line respectively have portions formed of a common refractory metal film arranged on the insulating surface of a support substrate. The source and drain electrodes, the upper electrode, and a signal line respectively have portions formed of a common Mo film. Each pixel electrode has a portion formed of an ITO film. Each auxiliary capacitance further has an intervening layer between the dielectric layer and the upper electrode. The intervening layer has a portion formed of a semiconductor film common to the active layer of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.