Method and apparatus for constant composition delivery of hydride gases for semiconductor processing
US6080297A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 5, 1998 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Jun 5, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides an electrochemical system and process for the production of very high purity hydride gases and the feed product streams including these hydride gases at constant composition over extended periods of time. The processes and apparatuses of the invention can employ a lined pressure vessel (1) within which resides an electrochemical cell including cathode (2) and anode (3) material. The hydride gas produced within the vessel exits through port (4) to a manifold which contains automatic valve (8) to allow exit of the hydride gas. The hydride gas passes through one or more filters (7). The gas finally exits the manifold through a pressure regulator (6) to the point where it is utilized in semiconductor fabrication. A source of gas (11) for mixing with the hydride gas is also included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.